document number: 93541 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 17-apr-08 1 standard recovery diodes (stud version), 200 a sd200n/r series vishay high power products features ? wide current range ? high voltage ratings up to 2400 v ? high surge current capabilities ? stud cathode and stud anode version ? standard jedec types ? compression bonded encapsulations ?rohs complaint ? lead (pb)-free ? designed and qualified for industrial level typical applications ? converters ? power supplies ? machine tool controls ? high power drives ? medium traction applications electrical specifications product summary i f(av) 200 a do-205ac (do-30) rohs compliant major ratings and characteristics parameter test conditions sd200n/r units 1600 to 2000 2400 i f(av) 200 a t c 110 c i f(rms) 314 a i fsm 50 hz 4700 60 hz 4920 i 2 t 50 hz 110 ka 2 s 60 hz 101 v rrm range 1600 to 2000 2400 v t j - 40 to 180 150 c voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at t j = t j maximum ma sd200n/r 16 1600 1700 15 20 2000 2100 24 2400 2500
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93541 2 revision: 17-apr-08 sd200n/r series vishay high power products standard recovery diodes (stud version), 200 a forward conduction parameter symbol test conditions values units maximum average forward current at case temperature i f(av) 180 conduction, half sine wave 200 a 110 c maximum average forward current at case temperature 220 a 100 c maximum rms forward current i f(rms) dc at 95 c case temperature 314 a maximum peak, one-cycle forward, non-repetitive surge current i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 4700 t = 8.3 ms 4920 t = 10 ms 100 % v rrm reapplied 3950 t = 8.3 ms 4140 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 110 ka 2 s t = 8.3 ms 101 t = 10 ms 100 % v rrm reapplied 78 t = 8.3 ms 71 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 1100 ka 2 s low level value of threshold voltage v f(to)1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 0.90 v high level value of threshold voltage v f(to)2 (i > x i f(av) ), t j = t j maximum 1.00 low level value of forward slope resistance r f1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 0.79 m high level value of forward slope resistance r f2 (i > x i f(av) ), t j = t j maximum 0.64 maximum forward voltage drop v fm i pk = 630 a, t j = t j maximum, t p = 10 ms sinusoidal wave 1.40 v thermal and mechanical specifications parameter symbol test conditions sd200n/r units 1600 to 2000 2400 maximum junction operating temperature range t j - 40 to 180 - 40 to 150 c maximum storage temperature range t stg - 55 to 200 maximum thermal resistance, junction to case r thjc dc operation 0.23 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.08 maximum allowed mounting torque 10 % not-lubricated threads 14 nm approximate weight 120 g case style see dimensions (link at the end of datasheet) do-205ac (do-30)
document number: 93541 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 17-apr-08 3 sd200n/r series standard recovery diodes (stud version), 200 a vishay high power products note ? the table above shows the increment of thermal resistance r thjc when devices operate at di fferent conduction angles than dc fig. 1 - current ratings characteristics f ig. 2 - current ratings characteristics fig. 3 - forward powe r loss characteristics r thjc conduction conduction angle sinusoidal conduction rect angular conduction test conditions units 180 0.041 0.030 t j = t j maximum k/w 120 0.049 0.051 90 0.063 0.068 60 0.093 0.096 30 0.156 0.157 100 110 120 130 140 150 160 170 180 04080120160200240 30 60 90 120 180 average forward current (a) conduction angle maximum allowable case temperature (c) sd 2 0 0 n / r se r i e s r (dc) = 0.23 k/ w thjc 90 100 110 120 130 140 150 160 170 180 0 50 100150200250300350 dc 30 60 90 120 180 conduction period maximum allowable case temperature (c) average forward current (a) sd 2 0 0 n / r se r i e s r (dc) = 0.23 k/ w thjc average forward current (a) maximum average forward power loss (w) maximum allowable ambient temperature (c) 0 50 100 150 200 250 300 0 50 100 150 200 25 0 180 120 90 60 30 rms limit conduction angle sd200n/r series tj = tj max 40 60 80 100 120 140 160 180 0.3 k/w 0.4 k/w 0.2 k/w 0.12 k/w 1.4 k/w 1.8 k/ w 0.6 k/w 0.8 k/ w rthsa = 0.08 k/w - delta r
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93541 4 revision: 17-apr-08 sd200n/r series vishay high power products standard recovery diodes (stud version), 200 a fig. 4 - forward power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - forward voltage drop characteristics average forward current (a) maximum average forward power loss (w) maximum allowable ambient temperature (c) 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 35 0 dc 180 120 90 60 30 rms limit conduction period sd200n/r series tj = tj max 40 60 80 100 120 140 160 180 0.3 k /w 0.4 k/w 0.2 k /w 0.12 k/w 1.4 k/w 1.8 k/w 0.6 k/w 0.8 k/w rthsa = 0.08 k/w - delta r peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 1000 1500 2000 2500 3000 3500 4000 4500 11010 0 sd200n/r series at any rated load condition and with rated vrrm applied following surge. initial tj = tj max @ 60 hz 0.0083 s @ 50 hz 0.0100 s pulse train duration (s) peak half sine wave forward current (a) 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.01 0.1 1 versus pulse train duration. maximum non repetitive surge current sd200n/r series initial tj = tj max no voltage reapplied rated vrrm reapplied instantaneous forward voltage (v) instantaneous forward current (a) 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 sd200n/r series tj = 25 c tj = tj max
document number: 93541 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 17-apr-08 5 sd200n/r series standard recovery diodes (stud version), 200 a vishay high power products fig. 8 - thermal impedance z thjc characteristic ordering information table 0.01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) thjc transient thermal impedance z (k/w) st e a d y st a t e v a l u e : r = 0 . 2 3 k/ w (dc operation) thjc sd 2 0 0 n / r se r i e s device code 5 13 24 67 sd 20 0 n 24 p c 1 - diode 2 - essential part number 3 - 0 = standard recovery 4 - n = stud normal polarity (cathode to stud) r = stud reverse polarity (anode to stud) 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 - p = stud base do-205ac (do-30) 1/2" 20unf-2a m = stud base do-205ac (do-30) m12 x 1.75 7 - c = ceramic housing for metric device m12 x 1.75 contact factory links to related documents dimensions http://www.vishay.com/doc?95302
document number: 95302 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 11-apr-08 1 do-205ac (do-30) outline dimensions vishay semiconductors dimensions in millimeters (inches) *for metric device: m12 x 1.75 contact factory 16.5 (0.65) max. dia. 8.5 (0.33) nom. dia. 22.5 (0.88) max. sw 27 c.s. 16 mm 2 (0.015 s.i.) 157 (6.18) 170 (6.69) 55 (2.16) min. 21 (0.82) max. 1/2"-20unf-2a* 6.5 (0.26) min. 35 (1.38) max. 2.6 (0.10) max. 12.5 (0.49) max. ceramic housing
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